Download e-book for iPad: Advances in nanodevices and nanofabrication : selected by Qing Zhang, W. I. Milne

By Qing Zhang, W. I. Milne

ISBN-10: 9814364541

ISBN-13: 9789814364546

A number of units at nanometer/molecular scale for digital, photonic, optoelectronic, organic, and mechanical purposes were created during the quick improvement of fabrics and fabrication know-how. additional improvement of nanodevices strongly relies on the state of the art wisdom of technological know-how and expertise on the sub-100 nm scale. This booklet offers and highlights a number of the key advances on, yet now not restricted to, digital and optoelectronic units of nanometer/molecular scale, nanomechanics and nanoelectromechanical platforms, electromechanical coupled units, manipulation and aligning strategies at nanometer/molecular scale, quantum phenomena, modeling of nanodevices and nanostructures, fabrication and estate characterization of nanodevices, and nanofabrication with targeted beam know-how.

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Additional info for Advances in nanodevices and nanofabrication : selected publications from Symposium of Nanodevices and Nanofabrication in ICMAT2011

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Due to the high selectivity between the deposited and sacrificial/dummy material, the dummy/sacrificial layer will be rapidly etched away. 10d) will act as the masking material for patterning the layer underneath. This process is known as spacer formation. The spacers define the width of the desired NWs [61]. Therefore, the thickness of the deposited layer will determine the feature size (width) of the intended structure. Continue etching downward into the layer underneath will form the desired small and sub-10 nm NWs.

Acknowledgement This work is funded by Dutch Technologie Stichting (STW) under project code 10255. D. Tong and DIMES ICP staff for their advices in cleanroom processing and deep discussions on fabrication of SiNW. LCPMds acknowledges the Netherlands Organization for Scientific Research (NWO) for a VENI grant. References [1] G. T. Galyon, “A history of Tin Whisker Theory: 1946–2004,” SMTAI International Conference, September 26–30 2004. [2] P. ,” Nano Letters, vol. 10, pp. 1529–1536. [3] X. Duan and C.

362, pp. 1247–1260, 2004. [27] Y. , “Single-crystal metallic nanowires and metal/ semiconductor nanowire heterostructures,” Nature, vol. 430, pp. 61– 65, 2004. [28] J. , “Ge/Si nanowire heterostructures as high-performance field-effect transistors,” Nature, vol. 441, pp. 489–493, 2006. [29] B. Z. G. Yu D P, Ding Y, Hang Q L, Zhang H Z, Wang J J, Zou Y H, Qian W, Xiong G C, Zhou H T and Feng S Q “Nanoscale silicon wires synthesized using simply physical evaporation,” Appl. Phys. Lett. , vol. 72, 1998.

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Advances in nanodevices and nanofabrication : selected publications from Symposium of Nanodevices and Nanofabrication in ICMAT2011 by Qing Zhang, W. I. Milne


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